The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Sep. 14, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventors:
Masaki Noguchi, Yokkaichi, JP;
Akira Takashima, Fuchu, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H10B 43/27 (2023.01); H01L 29/786 (2006.01); H01L 29/04 (2006.01); H01L 29/792 (2006.01); H10B 43/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 29/04 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01); H10B 43/27 (2023.02); H10B 43/30 (2023.02);
Abstract
In one embodiment, a semiconductor device includes a stacked film including electrode layers and insulating layers that are alternately stacked in a first direction. The device further includes a first insulator, a charge storage layer, a second insulator and a semiconductor layer that are provided in the stacked film. The device further includes a third insulator provided between an electrode layer and an insulating layer and between the electrode layer and the first insulator, and including aluminum oxide having an α crystal phase.