The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Jan. 20, 2021
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Toshiyuki Ogawa, Abiko, JP;

Hajime Ikeda, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/63 (2023.01); H04N 25/76 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14614 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14643 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H04N 25/63 (2023.01); H04N 25/76 (2023.01);
Abstract

A photoelectric conversion apparatus includes a semiconductor layer including a photoelectric conversion portion, a charge holding portion configured to hold electric charge generated from the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred. A gate electrode of a transistor and a light shielding film including a first portion covering the charge holding portion and a second portion covering an upper surface of the gate electrode are disposed above the semiconductor layer. The distance between the second portion of the light shielding film and the upper surface of the gate electrode is greater than the distance between the first portion of the light shielding film and the semiconductor layer.


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