The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11735584 B1

Date of Patent:

Aug. 22, 2023

Filed:

Aug. 14, 2022

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Tatsuya Naito, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Mohsen Ahmadi

Int. Cl.

CPC ...

H01L 27/06 (2006.01); H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 21/76 (2006.01); H01L 21/765 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0635 (2013.01); H01L 21/76 (2013.01); H01L 21/765 (2013.01); H01L 27/0727 (2013.01); H01L 29/0696 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/404 (2013.01); H01L 29/405 (2013.01); H01L 29/407 (2013.01); H01L 29/4238 (2013.01); H01L 29/739 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/8613 (2013.01); H01L 29/8611 (2013.01);

Abstract

A semiconductor device, allowing easy hole extraction, including a semiconductor substrate having drift and base regions; and transistor and diode portions, in which trench portions and mesa portions are formed, is provided. The transistor portion includes emitter and contact regions above the base region and exposed to an upper surface of the semiconductor substrate. The emitter region has a higher concentration than the drift region. The contact region has a higher concentration than the base region. The mesa portions include boundary mesa portion(s) at a boundary between the transistor and diode portions. The trench portions include dummy trench portion(s) provided adjacent to a trench portion adjacent to the boundary mesa portion(s) and provided on the transistor portion side relative to the trench portion adjacent to the boundary mesa portion(s). The boundary mesa portion(s) include a base boundary mesa portion in which the base region is exposed to the upper surface.

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