The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Apr. 08, 2021
Applicant:
Exogenesis Corporation, Billerica, MA (US);
Inventors:
Sean R. Kirkpatrick, Littleton, MA (US);
Kiet A. Chau, North Reading, MA (US);
Thy Yam, Billerica, MA (US);
Michael J. Walsh, Middleton, MA (US);
Assignee:
EXOGENESIS CORPORATION, Billerica, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); C03C 15/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); C03C 15/00 (2006.01); H01L 21/265 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C03C 15/00 (2013.01); C03C 15/025 (2013.01); H01L 21/0234 (2013.01); H01L 21/02115 (2013.01); H01L 21/02167 (2013.01); H01L 21/02227 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/02274 (2013.01); H01L 21/02326 (2013.01); H01L 21/26566 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/30604 (2013.01); H01L 21/3105 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01J 2237/061 (2013.01); H01J 2237/0812 (2013.01);
Abstract
A method for removing amorphous regions from a surface of a crystal substrate uses an accelerated neutral beam including reactive gas species for removing or reactively modifying material surfaces without sputtering. Accelerated neutral atom beam enabled surface reactions remove surface contaminants from substrate surfaces to create an interface region with exposed crystal lattice in preparation for next phase processing.