The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Jan. 20, 2021
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Ryo Nakao, Musashino, JP;
Tomonari Sato, Musashino, JP;
Assignee:
NIPPON TELEGRAPH AND TELEPHONE CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02647 (2013.01); H01L 21/02233 (2013.01); H01L 21/02241 (2013.01); H01L 21/02381 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01);
Abstract
A second semiconductor layer is oxidized through a groove and a fourth semiconductor layer is oxidized, a first oxide layer is formed, and a second oxide layer is formed. By oxidizing the entire second semiconductor layer and the fourth semiconductor layer, the first oxide layer and the second oxide layer in an amorphous state are formed.