The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
May. 20, 2021
Applicant:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Inventors:
Taesung Kim, Seoul, KR;
Hyunho Seok, Anyang-si, KR;
Hyeong U Kim, Ansan-si, KR;
Jinill Cho, Busan, KR;
Kanade Chaitanya Kaluram, Suwon-si, KR;
Assignee:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 29/225 (2006.01); H01L 29/24 (2006.01); H01L 29/861 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02614 (2013.01); H01L 21/02422 (2013.01); H01L 29/225 (2013.01); H01L 29/24 (2013.01); H01L 29/242 (2013.01); H01L 29/267 (2013.01); H01L 29/861 (2013.01); H01L 21/0256 (2013.01); H01L 21/02557 (2013.01); H01L 21/02562 (2013.01); H01L 21/02568 (2013.01);
Abstract
A method of preparing a heterojunction material, includes forming a first transition metal on a substrate, forming a second transition metal on the first transition metal, and performing a plasma process containing a chalcogen source on the substrate. The first transition metal and the second transition metal are different from each other.