The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Mar. 03, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seokjae Lee, Gwangmyeong-si, KR;
Bok-Yeon Won, Namyangju-si, KR;
Kyoungmin Kim, Namyangju-si, KR;
Donggeon Kim, Suwon-si, KR;
Myeongsik Ryu, Anyang-si, KR;
Sangwook Park, Hwaseong-si, KR;
Inseok Baek, Suwon-si, KR;
Abstract
A sub-word-line driver and semiconductor memory devices including the same are provided. The sub-word-line driver may include a word line pull-up transistor, a word line pull-down transistor, and a keeping transistor configured to maintain a word line at a specified voltage level. The sub-word-line driver may include a peripheral active region on a substrate, a first peripheral gate electrode that corresponds to a gate node of the word line pull-down transistor on the peripheral active region, a second peripheral gate electrode that corresponds to a gate node of the keeping transistor on the peripheral active region, and a first lower contact coupled to a first region of the peripheral active region. A first (VBB) voltage from the first region may be supplied to a source node of the keeping transistor.