The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Oct. 14, 2021
Applicant:

Regents of the University of Minnesota, Minneapolis, MN (US);

Inventors:

Jian-Ping Wang, Shoreview, MN (US);

Delin Zhang, Saint Paul, MN (US);

Protyush Sahu, Minneapolis, MN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02);
Abstract

A magnetic device includes a layer stack comprising a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; a dielectric barrier layer on the second ferromagnetic layer; an insertion layer positioned between the second ferromagnetic layer and the dielectric barrier layer; and a fixed layer or an electrode on the dielectric barrier layer. In some examples, a magnetic orientation of the second ferromagnetic layer is switched by a bias voltage across the layer stack without application of an external magnetic field; an antiferromagnetic coupling of the first and second ferromagnetic layers is increased by the bias voltage applying a negative charge to the fixed layer or the electrode, and the antiferromagnetic coupling of the first and second ferromagnetic layers is decreased by the bias voltage applying a positive charge to the fixed layer or the electrode.


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