The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Sep. 20, 2021
Applicant:

Elwha Llc, Bellevue, WA (US);

Inventors:

Rachel Cannara, Kirkland, WA (US);

Emma Rae Mullen, Seattle, WA (US);

Fred Sharifi, Kirkland, WA (US);

Assignee:

Elwha LLC, Bellevue, WA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 11/32 (2006.01); C25F 3/12 (2006.01);
U.S. Cl.
CPC ...
C25D 11/32 (2013.01); C25F 3/12 (2013.01);
Abstract

The present disclosure relates to methods of fabricating a porous structure, such as a porous silicon carbide structure. The methods can include a step of providing a structure to be rendered porous, and a step of providing an etching solution. The methods can also include a step of electrochemically etching the structure to produce pores through at least a region of the structure, resulting in the formation of a porous structure. The morphology of the porous structure can be controlled by one or more parameters of the electrochemical etching process, such as the strength of the etching solution and/or the applied voltage.


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Cannara, Rachel. (2023). Methods for fabricating and etching porous silicon carbide structures (U.S. Patent No. 11732377). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11732377

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