The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

May. 28, 2021
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventors:

Ashfaque Uddin, San Jose, CA (US);

Daesung Lee, San Jose, CA (US);

Alan Cuthbertson, San Jose, CA (US);

Assignee:

InvenSense, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B81B 3/00 (2006.01); B81B 7/00 (2006.01); B81B 7/02 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00801 (2013.01); B81B 3/001 (2013.01); B81B 7/0025 (2013.01); B81B 7/02 (2013.01); B81C 1/00968 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/012 (2013.01); B81C 2201/014 (2013.01); B81C 2201/0132 (2013.01); B81C 2203/036 (2013.01); B81C 2203/0792 (2013.01);
Abstract

A method includes forming an etch stop layer over a first side of a device wafer. The method also includes forming a polysilicon layer over the etch stop layer. A handle wafer is fusion bonded to the first side of the device wafer. A eutectic bond layer is formed on a second side of the device wafer. A micro-electro-mechanical system (MEMS) features are etched into the second side of the device wafer to expose the etch stop layer. The exposed etch stop layer is removed to expose the polysilicon layer. The exposed polysilicon layer is removed to expose a cavity formed between the handle wafer and the device wafer.


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