The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jun. 17, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Dominik Heiss, Munich, DE;

Christoph Kadow, Gauting, DE;

Matthias Markert, Weinboehla, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H01L 23/66 (2006.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/011 (2023.02); H01L 23/66 (2013.01); H10N 70/231 (2023.02); H10N 70/823 (2023.02); H10N 70/8413 (2023.02); H10N 70/8828 (2023.02);
Abstract

A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.


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