The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jun. 28, 2021
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Byong Guk Park, Daejeon, KR;

Min-Gu Kang, Daejeon, KR;

Jong-Guk Choi, Gongju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); H10N 52/80 (2023.01); G11C 11/18 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01);
U.S. Cl.
CPC ...
H10N 52/80 (2023.02); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); H10B 61/00 (2023.02); H10N 52/00 (2023.02);
Abstract

Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.


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