The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

May. 17, 2021
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Sanghun Jeon, Daejeon, KR;

Youngin Goh, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H10B 53/30 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02); H01L 28/60 (2013.01);
Abstract

Provided is a nonvolatile memory device including a lower electrode on a substrate, an upper electrode on the lower electrode, a tunnel barrier pattern between the lower electrode and the upper electrode, and a fixed charge pattern in contact with the lower electrode and spaced apart from the tunnel barrier pattern with the lower electrode therebetween. The tunnel barrier pattern includes an anti-ferroelectric material. The lower electrode includes a first material. The upper electrode includes a second material. The first material and the second material have different work functions.


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Quick Actions:

Jeon, Sanghun. (2023). Nonvolatile memory device and cross point array device including the same (U.S. Patent No. 11729992). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11729992

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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