The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Mar. 29, 2022
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Moon Sik Seo, Gyeonggi-do, KR;

Gil Bok Choi, Daejeon, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/20 (2023.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/20 (2023.02); H10B 41/30 (2023.02);
Abstract

The present technology provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a channel structure, insulating structures surrounding the channel structure and stacked to be spaced apart from each other, interlayer insulating films surrounding the insulating structures, respectively, and a gate electrode extending from between the interlayer insulating films to between the insulating structures and surrounding the channel structure. The insulating structures may include protrusion portions extending to cover edges of the interlayer insulating films facing the channel structure, and the gate electrode may extend between the protrusion portions which are adjacent to each other.


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