The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jan. 25, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Semen Syroiezhin, Erlangen, DE;

Valentyn Solomko, Munich, DE;

Matthias Voelkel, Unterhaching, DE;

Aleksey Zolotarevskyi, Erlangen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/04 (2006.01); H03K 17/0412 (2006.01); H03K 17/16 (2006.01); H03K 17/693 (2006.01); H03K 17/042 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/04206 (2013.01); H03K 17/04123 (2013.01); H03K 17/687 (2013.01); H03K 2217/0054 (2013.01);
Abstract

A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.


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