The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Dec. 11, 2018
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Tatsushi Hamaguchi, Kanagawa, JP;

Jugo Mitomo, Kanagawa, JP;

Rintaro Koda, Tokyo, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/0206 (2013.01); H01S 5/0207 (2013.01); H01S 5/0208 (2013.01); H01S 5/04257 (2019.08); H01S 5/18361 (2013.01);
Abstract

A light emitting element of the present disclosure includes a compound semiconductor substrate, a stacked structureincluding a GaN-based compound semiconductor, a first light reflection layer, and a second light reflection layer. The stacked structureincludes, in a stacked state a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The first light reflection layeris disposed on the compound semiconductor substrateand has a concave mirror section. The second light reflection layeris disposed on a second surface side of the second compound semiconductor layerand has a flat shape. The compound semiconductor substrateincludes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.


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