The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jul. 07, 2020
Applicant:

Inphi Corporation, Santa Clara, CA (US);

Inventors:

Xiaoguang He, Diamond Bar, CA (US);

Radhakrishnan L. Nagarajan, Santa Clara, CA (US);

Assignee:

MARVELL ASIA PTE LTD, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/028 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/14 (2006.01); H01S 5/20 (2006.01); H01S 5/343 (2006.01); H01S 5/227 (2006.01); H01S 5/065 (2006.01); H01S 5/06 (2006.01); H01S 5/50 (2006.01); H01S 5/10 (2021.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0287 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/142 (2013.01); H01S 5/2022 (2013.01); H01S 5/0078 (2013.01); H01S 5/0218 (2013.01); H01S 5/0612 (2013.01); H01S 5/0654 (2013.01); H01S 5/1085 (2013.01); H01S 5/227 (2013.01); H01S 5/34306 (2013.01); H01S 5/50 (2013.01);
Abstract

A method for improving wide-band wavelength-tunable laser. The method includes configuring a gain region between a first facet and a second facet and crosswise a PN-junction with an active layer between P-type cladding layer and N-type cladding layer. The method further includes coupling a light excited in the active layer and partially reflected from the second facet to pass through the first facet to a wavelength tuner configured to generate a joint interference spectrum with multiple modes separated by a joint-free-spectral-range (JFSR). Additionally, the method includes configuring the second facet to have reduced reflectivity for increasing wavelengths. Furthermore, the method includes reconfiguring the gain chip with an absorption layer near the active layer to induce a gain loss for wavelengths shorter than a longest wavelength associated with a short-wavelength side mode. Moreover, the method includes outputting amplified light at a basic mode via the second facet.


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