The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jan. 06, 2022
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Daniel Bryce Thompson, Redmond, WA (US);

James Small, Langbank, GB;

Assignee:

META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); G02B 27/01 (2006.01); G06F 1/16 (2006.01); H01L 25/075 (2006.01); H01L 33/00 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); G02B 27/0172 (2013.01); G06F 1/163 (2013.01); H01L 25/0753 (2013.01); H01L 33/0062 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); G02B 2027/0178 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

Disclosed herein are techniques for reducing the pitch between light-emitting diodes (LEDs) in an array of LEDs. According to an aspect of the invention, a method includes forming a plurality of stacks of layers on a surface of a semiconductor, with a p contact at an interface between each stack and a p-type layer of the semiconductor. The semiconductor is etched to form a plurality of mesa shapes corresponding to the plurality of stacks. A dielectric is formed on at least a portion of each mesa shape and at least a portion of each stack. A reflector is formed on at least a portion of the dielectric and at least a portion of the semiconductor to provide an n contact at an interface between the reflector and an n-type layer of the semiconductor. The reflector is physically separated from the p contact for each stack.


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