The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Dec. 03, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Philip Hsin-hua Li, Santa Clara, CA (US);
Seshadri Ramaswami, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0392 (2006.01); H01L 31/0749 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03928 (2013.01); H01L 31/0749 (2013.01); H01L 31/18 (2013.01);
Abstract
Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.