The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Nov. 15, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Markus Scherrer, Zurich, CH;

Kirsten Emilie Moselund, Ruschlikon, CH;

Preksha Tiwari, Zurich, CH;

Noelia Vico Trivino, Zurich, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); H01L 21/02381 (2013.01); H01L 21/02505 (2013.01); H01L 21/02645 (2013.01);
Abstract

The invention relates to a method for fabricating a semiconductor device. The method includes steps of providing a cavity structure, the cavity structure including a seed area including a seed material. The method further includes growing, within the cavity structure, a first embedding layer in a first growth direction from a seed surface of the seed material. The method includes further steps of removing the seed material, growing, in a second growth direction, from a seed surface of the first embedding layer, a quantum dot structure and growing, within the cavity structure, on a surface of the quantum dot structure, a second embedding layer in the second growth direction. The second growth direction is different from the first growth direction. The invention further relates to devices obtainable by such a method.


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