The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Dec. 14, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yul Lee, Seoul, KR;
Yuri Masuoka, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/28167 (2013.01); H01L 21/76264 (2013.01); H01L 29/0895 (2013.01); H01L 29/66621 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/66651 (2013.01); H01L 29/785 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device includes at least one active pattern on a substrate, at least one gate electrode intersecting the at least one active pattern, source/drain regions on the at least one active pattern, the source/drain regions being on opposite sides of the at least one gate electrode, and a barrier layer between at least one of the source/drain regions and the at least one active pattern, the barrier layer being at least on bottoms of the source/drain regions and including oxygen.