The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Dec. 02, 2022
Nanya Technology Corporation, New Taipei, TW;
Pei-Jhen Wu, Taipei, TW;
Hsih-Yang Chiu, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The semiconductor device includes a first source/drain layer, a dielectric layer, a channel, a gate electrode, a first gate dielectric layer, a seed layer, a conductive layer, and a second source/drain layer. The dielectric layer is disposed on the first source/drain layer, in which the dielectric layer has a hole penetrating the dielectric layer. The channel is disposed in the hole and extends substantially perpendicular to an upper surface of the first source/drain layer. The gate electrode surrounds the channel. The first gate dielectric layer is disposed between the gate electrode and the channel. The seed layer is disposed between the gate electrode and the dielectric layer and on an upper surface of the dielectric layer, in which the seed layer covers a portion of a sidewall of the hole.