The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Feb. 27, 2020
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Wonhwa Lee, Bucheon-si, KR;
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Abstract
A power semiconductor device includes a semiconductor layer having a first conductivity type. A pillar is provided in the semiconductor layer and has a second conductivity type that is different than the first conductivity type. A first trench gate is provided in the pillar proximate to a first vertical edge of the pillar. A second trench gate is provided in the pillar proximate to a second vertical edge of the pillar, the second vertical edge being on an opposing side of the pillar of the first vertical edge. A first electrode is provided over a first side of the semiconductor layer. A second electrode is provided over a second side of the semiconductor layer.