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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11728404 B1

PDFFull Text
Date of Patent:
Aug. 15, 2023

Filed:

Jun. 17, 2021

Method of manufacturing a hemt device with reduced gate leakage current, and hemt device

Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Ferdinando Iucolano, Gravina di Catania, IT;

Paolo Badalá, Acireale, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/47 (2006.01); H01L 29/778 (2006.01); H01L 21/28 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/30 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/28264 (2013.01); H01L 21/28581 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/475 (2013.01); H01L 29/66431 (2013.01); H01L 29/7786 (2013.01); C23C 14/0021 (2013.01); C23C 14/0641 (2013.01); C23C 14/0676 (2013.01); C23C 14/30 (2013.01); H01L 29/41766 (2013.01);
Abstract

An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.

Find Patent Forward Citations

Iucolano, Ferdinando. (2023). Method of manufacturing a hemt device with reduced gate leakage current, and hemt device (U.S. Patent No. 11728404). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11728404

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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