The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Aug. 23, 2021
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Yuzo Fukuzaki, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
A semiconductor device includes a stacked structure having channel formation region layers CHand CH, gate electrode layers G, G, and Galternately arranged on a base, in which a lowermost layer of the stacked structure is formed with a 1layer Gof the gate electrode layers, an uppermost layer of the stacked structure is formed with an N(where N≥3) layer Gof the gate electrode layers, the gate electrode layers each have a first end face, a second end face, a third end face opposing the first end face, and a fourth end face opposing the second end face, the first end face of odd-numbered layers G, Gof the gate electrode layers is connected to a first contact portion, and the third end face of an even-numbered layer Gof the gate electrode layers is connected to a second contact portion.