The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Sep. 16, 2021
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Mahito Shinohara, Tokyo, JP;

Hiroshi Sekine, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 25/75 (2023.01); H04N 25/76 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/1463 (2013.01); H04N 25/75 (2023.01); H04N 25/76 (2023.01);
Abstract

A photoelectric conversion apparatus comprises a semiconductor layer including a first surface and a second surface, a first semiconductor region of a first conductivity type arranged in the semiconductor layer and configured to accumulate a signal charge generated by incident light, a second semiconductor region of the first conductivity type arranged in the semiconductor layer, a first transfer electrode configured to transfer the signal charge accumulated in the first semiconductor region to the second semiconductor region, a third semiconductor region of a second conductivity type arranged between the second semiconductor region and the second surface, and a fourth semiconductor region of the second conductivity type arranged between the third semiconductor region and the second surface. The third semiconductor region at least partially overlaps, in orthographic projection to the first surface, the second semiconductor region and the fourth semiconductor region.


Find Patent Forward Citations

Loading…