The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
May. 09, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Koji Dairiki, Ayabe, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A photoelectric conversion element includes a first electrode, a second electrode, a first layer, and a second layer. The first layer is provided between the first electrode and the second electrode. The second layer is provided between the first layer and the second electrode. The first layer contains selenium. The second layer contains In, Ga, Zn, and O. The second layer may contain an In—Ga—Zn oxide. The selenium may be crystalline selenium. The first layer functions as a photoelectric conversion layer. The second layer functions as a hole injection blocking layer. The In—Ga—Zn oxide may have a c-axis aligned crystal.