The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Feb. 25, 2022
Applicant:
Sionyx, Llc, Beverly, MA (US);
Inventors:
Assignee:
SIONYX, LLC, Beverly, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 27/146 (2006.01); H04N 23/56 (2023.01); H04N 25/70 (2023.01); H04N 25/71 (2023.01); H04N 25/771 (2023.01); H04N 25/131 (2023.01); H04N 25/13 (2023.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 27/1461 (2013.01); H01L 27/1464 (2013.01); H01L 27/14612 (2013.01); H01L 27/14625 (2013.01); H01L 27/14645 (2013.01); H01L 27/14647 (2013.01); H01L 27/14649 (2013.01); H04N 23/56 (2023.01); H04N 25/70 (2023.01); H04N 25/745 (2023.01); H04N 25/771 (2023.01); H01L 2924/0002 (2013.01); H04N 25/131 (2023.01); H04N 25/135 (2023.01);
Abstract
A monolithic sensor for detecting infrared and visible light according to an example includes a semiconductor substrate and a semiconductor layer coupled to the semiconductor substrate. The semiconductor layer includes a device surface opposite the semiconductor substrate. A visible light photodiode is formed at the device surface. An infrared photodiode is also formed at the device surface and in proximity to the visible light photodiode. A textured region is coupled to the infrared photodiode and positioned to interact with electromagnetic radiation.