The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Aug. 27, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Wonhyuk Hong, Seoul, KR;

Eui Bok Lee, Seoul, KR;

Rakhwan Kim, Suwon-si, KR;

Woojin Jang, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76816 (2013.01); H01L 21/76843 (2013.01); H01L 21/76879 (2013.01); H01L 23/5226 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01);
Abstract

A semiconductor device includes a transistor on a substrate, a first metal layer that is on the transistor and includes a lower wire electrically connected to the transistor, and a second metal layer on the first metal layer. The second metal layer includes an upper wire that is electrically connected to the lower wire and includes a via structure in a via hole and a line structure in a line trench. The via structure includes a via portion that is in the via hole and is coupled to the lower wire, and a barrier portion that vertically extends from the via portion to cover an inner surface of the line trench. The barrier portion is between the line structure and an insulating layer of the second metal layer. The barrier portion is thicker at its lower level than at its upper level.


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