The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Sep. 15, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Masakazu Tani, Tokyo, JP;

Shuichi Takahama, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49541 (2013.01); H01L 23/49575 (2013.01); H01L 23/49582 (2013.01); H01L 24/05 (2013.01); H01L 24/30 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 2224/30181 (2013.01);
Abstract

An object of the present disclosure is to suppress variation in currents flowing through semiconductor elements and thereby to achieve size reduction of the semiconductor elements. The semiconductor power module includes electrode terminals for connecting a first electrode to a first external electric component, a second electrode joined to upper surfaces of a plurality of semiconductor elements, and a second electrode extension portion for connecting the second electrode to a second external electric component. The sum of a current path length from the electrode terminal to the semiconductor element in the first electrode and a current path length from the semiconductor element to a second electrode terminal portion in the second electrode, is set to be the same among the plurality of semiconductor elements.


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