The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

May. 27, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sunggil Kim, Yongin-si, KR;

Jinhyuk Kim, Hwaseong-si, KR;

Jung-Hwan Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2023.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 25/0652 (2013.01); H01L 29/7827 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H01L 2225/06541 (2013.01);
Abstract

A semiconductor device and an electronic system, the device including a substrate including a cell array region and a connection region; a stack including electrodes vertically stacked on the substrate; a source conductive pattern on the cell array region and between the substrate and the stack; a dummy insulating pattern on the connection region and between the substrate and the stack; a conductive support pattern between the stack and the source conductive pattern and between the stack and the dummy insulating pattern; a plurality of first vertical structures on the cell array region and penetrating the electrode structure, the conductive support pattern, and the source structure; and a plurality of second vertical structures on the connection region and penetrating the electrode structure, the conductive support pattern, and the dummy insulating pattern.


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