The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Feb. 25, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Dongjun Lee, Anyang-si, KR;
Keunnam Kim, Yongin-si, KR;
Daehyoun Kim, Hwaseong-si, KR;
Taejin Park, Yongin-si, KR;
Sunghee Han, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.