The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Apr. 14, 2021
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Chandra Lius, Miao-Li County, TW;

Kuan-Feng Lee, Miao-Li County, TW;

Nai-Fang Hsu, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/13 (2006.01); G02F 1/1368 (2006.01); G02F 1/1345 (2006.01); G02F 1/1362 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/13454 (2013.01); G02F 1/13624 (2013.01); G02F 1/136209 (2013.01); H01L 27/1225 (2013.01); H01L 27/1237 (2013.01); H01L 27/1251 (2013.01); G02F 1/13685 (2021.01); G02F 2202/104 (2013.01); H01L 29/7869 (2013.01); H01L 29/78675 (2013.01);
Abstract

A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and the second semiconductor layer is an oxide semiconductor layer, wherein the first transistor is electrically connected to the second transistor.


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