The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Aug. 23, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Takashi Yoshida, Fuchu, JP;
René Vervuurt, Leuven, BE;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); C23C 16/30 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/458 (2013.01); C23C 16/45502 (2013.01); C23C 16/45534 (2013.01); C23C 16/45542 (2013.01); C23C 16/52 (2013.01); C23C 16/308 (2013.01); C23C 16/402 (2013.01);
Abstract
Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.