The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Oct. 16, 2019
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Martin Heller, Ithaca, NY (US);

Toma Fujita, Ithaca, NY (US);

Assignee:

ROHM Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01); B32B 15/04 (2006.01); B32B 15/20 (2006.01); H01L 23/02 (2006.01); B81B 7/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00269 (2013.01); B32B 15/043 (2013.01); B32B 15/20 (2013.01); B81B 7/0032 (2013.01); B81C 1/00261 (2013.01); H01L 23/02 (2013.01); H01L 24/01 (2013.01); H01L 24/02 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/07 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/94 (2013.01); B81B 2203/0315 (2013.01); B81C 2203/019 (2013.01); B81C 2203/0127 (2013.01); B81C 2203/035 (2013.01);
Abstract

A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.


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