The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Aug. 22, 2018
Applicant:
SK Enpulse Co., Ltd., Gyeonggi-do, KR;
Inventors:
Jang Won Seo, Busan, KR;
Hyuk Hee Han, Gyeonggi-do, KR;
Hye Young Heo, Gyeonggi-do, KR;
Joonsung Ryou, Gyeonggi-do, KR;
Young Pil Kwon, Gyeonggi-do, KR;
Assignee:
SK enpulse Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B24B 37/24 (2012.01); C08L 75/04 (2006.01); H01L 21/67 (2006.01); C08G 18/76 (2006.01); C08G 18/18 (2006.01); C08G 18/62 (2006.01); C08G 18/20 (2006.01); C08J 9/12 (2006.01); C08J 9/00 (2006.01); C08G 18/75 (2006.01); C08G 18/48 (2006.01); B24D 11/04 (2006.01); C08G 18/24 (2006.01); C08G 18/42 (2006.01); C08G 18/73 (2006.01); C08J 9/32 (2006.01); C08G 18/44 (2006.01);
U.S. Cl.
CPC ...
B24B 37/24 (2013.01); B24D 11/04 (2013.01); C08G 18/1816 (2013.01); C08G 18/1825 (2013.01); C08G 18/1833 (2013.01); C08G 18/2018 (2013.01); C08G 18/2081 (2013.01); C08G 18/244 (2013.01); C08G 18/246 (2013.01); C08G 18/42 (2013.01); C08G 18/44 (2013.01); C08G 18/48 (2013.01); C08G 18/6216 (2013.01); C08G 18/73 (2013.01); C08G 18/755 (2013.01); C08G 18/757 (2013.01); C08G 18/7614 (2013.01); C08G 18/7621 (2013.01); C08G 18/7671 (2013.01); C08G 18/7678 (2013.01); C08G 18/7685 (2013.01); C08J 9/0028 (2013.01); C08J 9/0042 (2013.01); C08J 9/0052 (2013.01); C08J 9/122 (2013.01); C08J 9/32 (2013.01); C08L 75/04 (2013.01); H01L 21/67092 (2013.01); C08G 2110/005 (2021.01); C08G 2110/0025 (2021.01); C08J 2201/026 (2013.01); C08J 2203/06 (2013.01); C08J 2203/22 (2013.01); C08J 2205/044 (2013.01); C08J 2375/04 (2013.01);
Abstract
Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for producing the same. In the porous polyurethane polishing pad, it is possible to control the size and distribution of pores, whereby the polishing performance (i.e., polishing rate) of the polishing pad can be adjusted, by way of employing thermally expanded microcapsules as a solid phase foaming agent and an inert gas as a gas phase foaming agent.