The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Jul. 12, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Eun Young Lee, Hwaseong-si, KR;

Do Hyung Kim, Seongnam-si, KR;

Taek Jung Kim, Seoul, KR;

Seung Jong Park, Seoul, KR;

Jae Wha Park, Yongin-si, KR;

Youn Jae Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H01L 23/528 (2013.01); H01L 23/53266 (2013.01); H10B 12/34 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.


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