The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Mar. 05, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Seung Wook Ryu, Gyeonggi-do, KR;
Kyoung Ryul Yoon, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H10B 12/00 (2023.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H01L 28/40 (2013.01); H01L 29/0673 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H10B 12/03 (2023.02); H10B 12/05 (2023.02); H10B 12/50 (2023.02); H01L 28/86 (2013.01); H01L 29/42392 (2013.01); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract
A memory device including a substrate; a bit line laterally oriented to be parallel to the substrate; a transistor including two channels that are laterally oriented from the bit line and a word line that is vertically oriented and surrounds the two channels; and a capacitor laterally oriented from the transistor.