The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Feb. 18, 2022
Shanghai Pingsheng Micro Corp, Shanghai, CN;
Bijiang Chen, Shanghai, CN;
Yang Wang, Shanghai, CN;
SHANGHAI PINGSHENG MICRO CORP, Shanghai, CN;
Abstract
Disclosed is a radio frequency switch and its radio frequency communication system. The RF switch comprises: N switch transistors Q˜Qconnected in series, wherein a first conducting terminal of Qserves as an output end, a second conducting terminal of Qserves as an input end a switch transistor located closer to the output end has a higher or equal withstand voltage than that of a switch transistor located closer to the input end, or a switch transistor located closer to the output end has a lower or equal withstand voltage than that of a switch transistor located closer to the input end, and Qand Qhas different withstand voltages. The withstand voltages of the switch transistors match the voltage division situation of the switch transistors affected by parasitic effect in the RF switch, thus the voltage withstand capability is basically not affected by parasitic effect.