The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Nov. 19, 2020
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

Kurt O. Wessendorf, Albuquerque, NM (US);

Darren W. Branch, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/193 (2006.01); H03D 7/12 (2006.01); G01N 29/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); G01N 29/022 (2013.01); H03D 7/12 (2013.01); G01N 2291/0215 (2013.01); H03F 2200/451 (2013.01);
Abstract

Multifunctional RF limiting amplifiers having various configurations and functions are disclosed. In a first configuration, the RF limiting amplifier includes an active load output circuit that allows one to adjust the output impedance based upon the anticipated connected load impedance. In a second configuration, the RF limiting amplifier includes a pair of emitter-followers to buffer the output of a first stage, allowing the RF limiting amplifier to drive one or more second stages. A third configuration includes a pair of RF limiting amplifiers with their outputs mixed to implement a down conversion function. The third configuration may be used to drive dual SAW resonators for detecting the presence of biological or chemical agents. The RF limiting amplifier may be implemented in either bipolar junction transistors or CMOS transistors.


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