The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Apr. 30, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Rahmi Hezar, Allen, TX (US);

Henry Litzmann Edwards, Garland, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/109 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 31/02027 (2013.01); H01L 31/109 (2013.01);
Abstract

An integrated circuit includes a photodetector that has an epitaxial layer with a first conductivity type located over a substrate. A buried layer of the first conductivity type is located within the epitaxial layer and has a higher carrier concentration than the epitaxial layer. A semiconductor layer located over the buried layer has an opposite second conductivity type and includes a first sublayer over the buried semiconductor layer and a second sublayer between the first sublayer and the buried layer. The first sublayer has a larger lateral dimension than the second sublayer, and has a lower carrier concentration than the second sublayer.


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