The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Mar. 15, 2019
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Kohei Yamada, Kitaibaraki, JP;

Koji Murakami, Kitaibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/08 (2006.01); H01L 31/0296 (2006.01); H01L 31/18 (2006.01); G01T 1/24 (2006.01); G01T 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/085 (2013.01); G01T 1/241 (2013.01); G01T 7/00 (2013.01); H01L 31/02966 (2013.01); H01L 31/1832 (2013.01);
Abstract

Provided is a radiation detecting element that has high adhesion between electrode portions and a substrate and does not suffer from performance failures due to insufficient insulation between the electrode portions, even if a distance between the electrode portions is narrower in order to obtain a high-definition radiation drawn image. The radiation detecting element includes: a plurality of electrode portions; and an insulating portion provided between the electrode portions on a surface of a substrate made of a compound semiconductor crystal containing cadmium telluride or cadmium zinc telluride, wherein an intermediate layer containing tellurium oxide is present between each of the electrode portions and the substrate, and wherein tellurium oxide is present on an upper portion of the insulating portion, and the tellurium oxide on the upper portion of the insulating portion has a maximum thickness of 30 nm or less.


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