The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jun. 16, 2021
Applicants:
Samsung Display Co., Ltd., Yongin-si, KR;
Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;
Inventors:
Taesang Kim, Seoul, KR;
Min Seong Kim, Seoul, KR;
Hyun Jae Kim, Seoul, KR;
Jun Hyung Lim, Seoul, KR;
Assignees:
SAMSUNG DISPLAY CO., LTD., Gyeonggi-do, KR;
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/1251 (2013.01); H01L 29/105 (2013.01); H01L 29/24 (2013.01);
Abstract
A transistor includes a gate electrode, an active layer facing the gate electrode, and a source electrode and a drain electrode connected to the active layer. The active layer includes a lower active layer including an oxide-based semiconductor material, and an upper active layer including the oxide-based semiconductor material and an oxygen-gettering material.