The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Mar. 10, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Sameer Pendharkar, Allen, TX (US);

Guru Mathur, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 23/528 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4238 (2013.01); H01L 29/0653 (2013.01); H01L 29/0696 (2013.01); H01L 29/0847 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 23/528 (2013.01); H01L 29/1045 (2013.01); H01L 29/41758 (2013.01); H01L 29/42368 (2013.01);
Abstract

An integrated circuit includes a power transistor having at least one transistor finger that lies within a semiconductor material substrate. Each transistor finger has a source region stripe and a substantially parallel drain region stripe. A gate structure lies between the source region stripe and the drain region stripe and has a plurality of fingers that extend over the source region stripe. Contacts are formed that connect to the fingers of the gate structure over thick oxide islands in the source region stripes. A conductive gate runner is connected to the contacts of the gate layer structure over the thick oxide islands in the source region stripe.


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