The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Feb. 07, 2022
Sharp Kabushiki Kaisha, Sakai, JP;
Hajime Imai, Sakai, JP;
Tohru Daitoh, Sakai, JP;
Tetsuo Kikuchi, Sakai, JP;
Masamitsu Yamanaka, Sakai, JP;
Yoshihito Hara, Sakai, JP;
Tatsuya Kawasaki, Sakai, JP;
Masahiko Suzuki, Sakai, JP;
Setsuji Nishimiya, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
The oxide semiconductor layer is electrically connected to a source electrode or the source bus line within the source opening formed in the lower insulating layer, each wiring line connection section includes a lower conductive portion formed using the first conductive film, the lower insulating layer extending over the lower conductive portion, an oxide connection layer formed using an oxide film the same as the oxide semiconductor layer and electrically connected to the lower conductive portion within the lower opening formed in the lower insulating layer, an insulating layer covering the oxide connection layer, and an upper conductive portion electrically connected to the oxide connection layer within the upper opening formed in the insulating layer, wherein the oxide connection layer includes a region lower in a specific resistance than the channel region of the oxide semiconductor layer.