The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Nov. 25, 2020
Applicant:

Nanjing University, Nanjing, CN;

Inventors:

Tao Tao, Nanjing, CN;

Xuan Wang, Nanjing, CN;

Feifan Xu, Nanjing, CN;

Bin Liu, Nanjing, CN;

Ting Zhi, Nanjing, CN;

Rong Zhang, Nanjing, CN;

Assignee:

NANJING UNIVERSITY, Nanjing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 25/075 (2006.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01);
Abstract

A Micro-LED array device based on III-nitride semiconductors and a method for fabricating the same are provided. The Micro-LED array device includes arrayed sector mesa structures that are formed by etching to penetrate through a p-type GaN layer and a quantum-well active layer and deep into an n-type GaN layer, a p-type electrode array deposited by evaporation on the p-type GaN layer of sector arrays, and an n-type electrode array deposited by evaporation on the n-type GaN layer. The n-type electrode array forms blocking walls to isolate the sector mesas from one another. The blocking walls, and each of the blocking walls and the annular structure surrounding the sector mesa are connected to each other.


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