The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Jan. 27, 2021
Applicant:

Stmicroelectronics (Rousset) Sas, Rousset, FR;

Inventors:

Abderrezak Marzaki, Aix en Provence, FR;

Pascal Fornara, Pourrieres, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 23/00 (2006.01); G04F 1/00 (2006.01); H01L 21/70 (2006.01); H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
H01L 23/573 (2013.01); G04F 1/005 (2013.01); H01L 21/705 (2013.01); H01L 27/013 (2013.01); H01L 27/101 (2013.01);
Abstract

An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunnelling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.


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