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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11721560 B1

PDFFull Text
Date of Patent:
Aug. 08, 2023

Filed:

Aug. 15, 2021

Manufacturing method of semiconductor device

Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Chia-Chieh Fan, Miao-Li County, TW;

Chin-Lung Ting, Miao-Li County, TW;

Cheng-Chi Wang, Miao-Li County, TW;

Ming-Tsang Wu, Miao-Li County, TW;

Assignee:

InnoLux Corporation, Miao-Li County, TW;

Attorney:

Winston Hsu

Primary Examiner:

Errol V Fernandes

Assistant Examiner:

Jeremy J Joy

Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 21/683 (2006.01); H01L 23/31 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/568 (2013.01); H01L 21/4853 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 24/97 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 25/105 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/95001 (2013.01); H01L 2225/1023 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/18162 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A manufacturing method of semiconductor device includes providing a substrate, forming a sacrificial layer on the substrate, forming a resin layer on the sacrificial layer, disposing first chips on the sacrificial layer, and forming a first dielectric layer having trenches and surrounding the first chips, wherein an upper surface of the first dielectric layer and an upper surface of the resin layer are at a same plane.

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Quick Actions:

Fan, Chia-Chieh. (2023). Manufacturing method of semiconductor device (U.S. Patent No. 11721560). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11721560

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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