The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Nov. 19, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Ryo Nakao, Tokyo, JP;
Tomonari Sato, Tokyo, JP;
Assignee:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02546 (2013.01); H01L 21/02178 (2013.01); H01L 21/02241 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 21/30608 (2013.01); H01L 21/02381 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01);
Abstract
In an embodiment, a first recess and a second recess, designed to reach a first semiconductor layer, are formed in the portions of a first threading dislocation and a second threading dislocation having reached the surface. Further, the first semiconductor layer is oxidized through the first recess and the second recess to form an insulating film configured to cover the lower surface of a second semiconductor layer.