The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Sep. 29, 2021
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Kikuya Morita, Shiojiri, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/136209 (2013.01); G02F 1/136286 (2013.01);
Abstract

In an electro-optical device, a first light shielding wall and a second light shielding wall pass through sides of a semiconductor layer of a transistor respectively, and reach a scan line on a lower layer side. In a second interlayer insulating layer, a first contact hole and a second contact hole that reach a first source drain region and a second source drain region of the semiconductor layer respectively are provided. Respective widths of the first source drain region and the second source drain region are equal to or less than respective widths of the first contact hole and the second contact hole. Accordingly, the first light shielding wall and the second light shielding wall extend to sides of the first contact hole and the second contact hole respectively.


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